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PolarHVTM HiPerFET Power MOSFET
IXFC 20N80P IXFR 20N80P
Electrically Isolated Back Surface
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t = 1minute, leads-to-tab Mounting Force ISOPLUS220 ISOPLUS247 (IXFC) (IXFR) Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 3 TC = 25C Maximum Ratings 800 800 30 40 11 60 10 30 1.0 10 166 -55 ... +150 150 -55 ... +150 300 2500 11..65 / 2.5..15 20..120 / 4.5..25 2 5 V V V V
VDSS = 800 V ID25 = 10 A RDS(on) 500 m trr 250 ns
ISOPLUS220TM (IXFC) E153432
G
A A A mJ J V/ns W C C C C V~ N/lb N/lb g g
D
S
Isolated back surface
ISOPLUS247TM (IXFR) E153432
Isolated back surface
G = Gate S = Source D = Drain
Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages Easy assembly Space savings High power density
DS99602E(08/06)
Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125C
Characteristic Values Min. Typ. Max. 800 3.0 5.0 100 25 1 500 V V nA A mA m
VGS = 10 V, ID = 10 A Pulse test, t 300 s, duty cycle d 2 %
(c) 2006 IXYS All rights reserved
IXFC 20N80P IXFR 20N80P
Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. 12 23 4680 VGS = 0 V, VDS = 25 V, f = 1 MHz 360 28 22 VGS = 10 V, VDS = VDSS , ID = 10 A RG = 3 (External) 24 70 25 85 VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A 25 27 S pF pF pF ns ns ns ns nC nC nC 0.75 C/W 0.21 C/W
Note: Bottom heatsink (Pin 4) is electrically isolated from Pin 1,2, or 3.
ISOPLUS220 (IXFC) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
VDS = 20 V; ID = 10 A, pulse test
Source-Drain Diode Symbol IS ISM VSD trr IRM QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. 20 60 1.5 250 8 0.8 A A V ns A C
IXYS CO 0177 R0
ISOPLUS247 (IXFR) Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 20A, -di/dt = 100 A/s VR = 100 V; VGS = 0 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2
IXFC 20N80P IXFR 20N80P
Fig. 1. Output Characte r is tics @ 25C
20 18 16 14 V GS = 10V 7V 6V 36 32 28 6V V GS = 10V 7V
Fig. 2. Exte nde d Output Char acte ris tics @ 25C
I D - Amperes
12 10 8 6 4 2 0 0 2 4 6 8 10 12 5V
I D - Amperes
24 20 16 12 8 5V 4 0 0 3 6 9 12 15 18 21 24 27 30
V D S - V olts Fig. 3. Output Characte r is tics @ 125C
20 18 16 14 V GS = 10V 7V 2.6 2.4 2.2 V GS = 10V
V D S - V olts Fig. 4. RDS(on ) Norm alize d to ID = 10A V alue vs . Junction Te m pe r atur e
R D S ( o n ) - Normalized
2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 I D = 20A I D = 10A
I D - Amperes
12 10 8 6 4 2 0 0 2 4 6 8 10 12 14
6V
5V
16
18
20
22
-50
-25
0
25
50
75
100
125
150
V D S - V olts Fig. 5. RDS(on) Nor m alize d to ID = 10A V alue vs . Dr ain Cur re nt
2.6 2.4 V GS = 10V TJ = 125 C
12 11 10 9
TJ - Degrees Centigrade
Fig. 6. Dr ain Cur r e nt vs . Cas e Te m pe r atur e
R D S ( o n ) - Normalized
2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25
I D - Amperes
TJ = 25 C 30 35 40
8 7 6 5 4 3 2 1 0 -50 -25 0 25 50 75 100 125 150
I D - A mperes
TC - Degrees Centigrade
(c) 2006 IXYS All rights reserved
IXFC 20N80P IXFR 20N80P
Fig. 7. Input Adm ittance
24 40 35 20 30 TJ = -40 C 25 C 125 C
Fig. 8. Tr ans conductance
I D - Amperes
16 TJ = 125 C 12 25 C -40 C 8
- Siemens
fs
25 20 15 10
4
g
5 0 3.5 3.75 4 4.25 4.5 4.75 5 5.25 5.5 5.75 0 5 10 15 20 25
0
V G S - V olts Fig. 9. Source Cur r e nt vs . Sour ce -To-Dr ain V oltage
60 10 9 50 8 7 V DS = 400V I D = 10A I G = 10m A
I D - A mperes Fig. 10. Gate Char ge
I S - Amperes
40
V G S - Volts
TJ = 25 C 0.9 1 1.1 1.2
6 5 4 3 2 1
30 TJ = 125 C
20
10
0 0.4 0.5 0.6 0.7 0.8
0 0 10 20 30 40 50 60 70 80 90
V S D - V olts Fig. 11. Capacitance
10000
Q
G
- nanoCoulombs
Fig. 12. M axim um Tr ans ie nt The r m al Re s is tance
1.00
Capacitance - picoFarads
C is s 1000
R ( t h ) J C - C / W
25 30 35 40
0.10
C os s 100
f = 1MH z 10 0 5 10 15
C rs s
0.01
20
0.0001
0.001
0.01
0.1
1
10
V D S - V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
Pulse Width - Seconds
IXYS REF: F_20N80P (7J) 8-23-06B

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